Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser
نویسندگان
چکیده
منابع مشابه
Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters.
We present the first III-V opto-electronic components transfer printed on and coupled to a silicon photonic integrated circuit. Thin InP-based membranes are transferred to an SOI waveguide circuit, after which a single-spatial-mode broadband light source is fabricated. The process flow to create transfer print-ready coupons is discussed. Aqueous FeCl3 at 5°C was found to be the best ...
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Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C ar...
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We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two...
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A range of high performance minority carrier devices have been successfully fabricated on Si “virtual” substrates where threading dislocation densities (TDDs) as low as 1x10 cm are routinely achieved. Minority carrier lifetime data achieved on GaAs-on-Si layers exploiting this novel SiGe buffer approach to monolithic integration (τp = 10.5 ns and τn = 1.7ns) verifies the high III-V material qua...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2018
ISSN: 1094-4087
DOI: 10.1364/oe.26.008821